Samsung DDR2 Memory
Samsung DDR2 Memory
part number | Density | Organization | Speed | Package | Bank/ Interface | Refresh | Power | Production Status |
K4T1G044QQ | 1G bit | 256Mx4 | E7,F7,E6 | 60FBGA | 8B/SSTL_1.8 | 8K/64ms | C,L,Y | Mass Production |
K4T1G084QQ | 1G bit | 128Mx8 | E7,F7,E6 | 60FBGA | 8B/SSTL_1.8 | 8K/64ms | C,L,Y | Mass Production |
K4T1G164QQ | 1G bit | 64Mx16 | E7,F7,E6 | 84FBGA | 8B/SSTL_1.8 | 8K/64ms | C,L | Mass Production |
K4T1G044QF | 1G bit | 256Mx4 | E7,F7,E6 | 60FBGA | 8B/SSTL_1.8 | 8K/64ms | C | Customer Sample |
K4T1G084QF | 1G bit | 128Mx8 | F8,E7,F7,E6 | 60FBGA | 8B/SSTL_1.8 | 8K/64ms | C | Customer Sample |
K4T1G164QF | 1G bit | 64Mx16 | F8,E7,F7,E6 | 84FBGA | 8B/SSTL_1.5 | 8K/64ms | C | Customer Sample |
K4T1G044QE | 1G bit | 256Mx4 | E7,F7,E6 | 60FBGA | 8B/SSTL_1.8 | 8K/64ms | C,L | Mass Production |
K4T1G084QE | 1G bit | 128Mx8 | E7,F7,E6 | 60FBGA | 8B/SSTL_1.8 | 8K/64ms | C,L | Mass Production |
K4T1G164QE | 1G bit | 64Mx16 | E7,F7,E6 | 84FBGA | 8B/SSTL_1.8 | 8K/64ms | C,L | Mass Production |
K4T51043QI | 512M bit | 128Mx4 | E7,F7,E6 | 60FBGA | 4B/SSTL_1.8 | 8K/64ms | C,L | Mass Production |
K4T51083QI | 512M bit | 64Mx8 | E7,F7,E6 | 60FBGA | 4B/SSTL_1.8 | 8K/64ms | C,L | Mass Production |
K4T51163QI | 512M bit | 32Mx16 | F8,E7,F7,E6 | 84FBGA | 4B/SSTL_1.8 | 8K/64ms | C,L | Mass Production |
K4T51043QG | 512M bit | 128Mx4 | E7,F7,E6,D5,CC | 60FBGA | 4B/SSTL_1.8 | 8K/64ms | C,L | Mass Production |
K4T51083QG | 512M bit | 64Mx8 | E7,F7,E6,D5,CC | 60FBGA | 4B/SSTL_1.8 | 8K/64ms | C,L | Mass Production |
K4T51163QG | 512M bit | 32Mx16 | E7,F7,E6,D5,CC | 84FBGA | 4B/SSTL_1.8 | 8K/64ms | C,L | Mass Production |
Note
Speed
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lead-free & halogen-free package
K4TXXXXXXX-XXXXXXX (Xth code represents a package)
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Power
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