Samsung DDR3 Memory

 

Samsung DDR3 Memory

part number Density Organization Voltage(V) Speed Package Bank/ Interface Refresh Power Production Status
K4B4G0446B 4G bit 1Gx4 1.5,1.35 F8,H9,K0,MA 78FBGA 8B/SSTL_15 8K/64ms C,Y Customer Sample
K4B4G0846B 4G bit 512Mx8 1.5,1.35 F8,H9,K0,MA 78FBGA 8B/SSTL_15 8K/64ms C,Y Customer Sample
K4B4G0446A 4G bit 1Gx4 1.5,1.35 F8,H9,K0 78FBGA 8B/SSTL_15 8K/64ms C,Y Mass Production
K4B4G0846A 4G bit 512Mx8 1.5,1.35 F8,H9,K0 78FBGA 8B/SSTL_15 8K/64ms C,Y Mass Production
K4B2G0446D 2G bit 512Mx4 1.5,1.35 F8,H9,K0,MA 78FBGA 8B/SSTL_15 8K/64ms C,Y Mass Production
K4B2G0846D 2G bit 256Mx8 1.5,1.35 F8,H9,K0,MA 78FBGA 8B/SSTL_15 8K/64ms C,Y Mass Production
K4B2G0446C 2G bit 512Mx4 1.5,1.35 F8,H9,K0 78FBGA 8B/SSTL_15 8K/64ms C,Y Mass Production
K4B2G0846C 2G bit 256Mx8 1.5,1.35 F8,H9,K0 78FBGA 8B/SSTL_15 8K/64ms C,Y Mass Production
K4B1G0446G 1G bit 256Mx4 1.5 F8,H9,K0 78FBGA 8B/SSTL_15 8K/64ms C Mass Production
K4B1G0846G 1G bit 128Mx8 1.5 F8,H9,K0,MA 78FBGA 8B/SSTL_15 8K/64ms C Mass Production
K4B1G0446F 1G bit 256Mx4 1.5,1.35 F8,H9,K0 78FBGA 8B/SSTL_15 8K/64ms C,Y Mass Production
K4B1G0846F 1G bit 128Mx8 1.5,1.35 F8,H9,K0 78FBGA 8B/SSTL_15 8K/64ms C,Y Mass Production
K4B1G1646E 1G bit 64Mx16   F8,H9,K0 96FBGA 8B/SSTL_15 8K/64ms C,L Mass Production

 

Note

Speed
  • ordering info : see below for part no. speed suffix
  • K4BXXXXXXX-[Suffix]
part no. suffixspeedCL-tRCD-tRP
F7 400MHz/800Mbps@CL6 6-6-6
F8 533MHz/1066Mbps@CL7 7-7-7
H9 667MHz/1333Mbps@CL9 9-9-9
K0 800MHz/1600Mbps@CL11 11-11-11
MA 933MHz/1866Mbps@CL13 13-13-13
lead-free & halogen-free package
 
K4BXXXXXXX-XXXX (Xth code represents a package)
 

Z : FBGA (lead-free)
H : FBGA (lead-free & halogen-free)
J : FBGA (lead-free, DDP)
M : FBGA (lead-free & halogen-free, DDP)

 
 
Power
 
C : Commercial Temp.(0°C ~ 85°C) & Normal Power
L : Commercial Temp.(0°C ~ 85°C) & Low Power
Y : Commercial Temp.(0°C ~ 85°C) & Low VDD(1.35V